| 摘要 |
<p>The ultraviolet light-emitting element of the present invention is provided with a single-crystal substrate, a plurality of island-shaped nuclei formed on one surface of the single-crystal substrate, and a buffer layer formed on the one surface side of the single-crystal substrate so as to cover all of the nuclei and fill in gaps between adjacent nuclei. The ultraviolet light-emitting element is furthermore provided with an n-type nitride semiconductor layer comprising n-type AlzGa1-zN (0 < z <= 1) formed on the buffer layer, a light-emitting layer having a quantum-well structure formed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer. In the ultraviolet light-emitting element, the n-type nitride semiconductor layer comprises n-type AlzGa1-zN (0 < z <= 1), and a well layer having a quantum-well structure comprises AlaGa1-aN (0 < a <= 1). In the ultraviolet light-emitting element, the nuclei comprise AlxGa1-xN (0 < x < 1), the buffer layer comprises AlyGa1-yN (0 < y <= 1), and x < y.</p> |
