发明名称 METHOD FOR PRODUCING ZINC OXIDE CRYSTAL, ZINC OXIDE CRYSTAL, SCINTILLATOR MATERIAL AND SCINTILLATOR DETECTOR
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a zinc oxide crystal which has a short fluorescent lifetime, exhibits little in-plane variation, and can be used as a scintillator material, and to provide the zinc oxide crystal.SOLUTION: A zinc oxide crystal doped with an impurity is grown by a hydrothermal synthesis method or a flux method using a seed crystal 6 that is subjected to mirror finish. The mirror finish is composed of rough polishing with SiC, polishing with diamond abrasive grain, and mechanical polishing with buff and water. The impurity is indium and the doping amount thereof is 0.05 to 0.25 mol.
申请公布号 JP2013212969(A) 申请公布日期 2013.10.17
申请号 JP20120085458 申请日期 2012.04.04
申请人 FUKUDA CRYSTAL LABORATORY 发明人 FUKUDA TSUGUO;YOSHIDA SHIGETOMO;SARUKURA NOBUHIKO;SHIMIZU TOSHIHIKO;NAKAZATO TOMOHARU
分类号 C30B29/16;C09K11/00;C09K11/54;C30B7/10;G01T1/20;G01T1/202 主分类号 C30B29/16
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