发明名称 FILM FORMING METHOD AND PROCESSING SYSTEM
摘要 A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film.
申请公布号 KR20130113351(A) 申请公布日期 2013.10.15
申请号 KR20127034196 申请日期 2011.06.24
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUMOTO KENJI;HOSAKA SHIGETOSHI;ITOH HITOSHI
分类号 H01L21/28;C23C14/08;H01L21/3205 主分类号 H01L21/28
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