发明名称 |
FILM FORMING METHOD AND PROCESSING SYSTEM |
摘要 |
A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film. |
申请公布号 |
KR20130113351(A) |
申请公布日期 |
2013.10.15 |
申请号 |
KR20127034196 |
申请日期 |
2011.06.24 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MATSUMOTO KENJI;HOSAKA SHIGETOSHI;ITOH HITOSHI |
分类号 |
H01L21/28;C23C14/08;H01L21/3205 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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