| 发明名称 |
Method for production of zinc oxide single crystals |
| 摘要 |
The disclosed subject matter includes a method of producing zinc oxide (ZnO) single crystals in an enclosure. The ZnO single crystals have a low concentration of lithium and hydrogen impurities.
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| 申请公布号 |
US8557628(B2) |
申请公布日期 |
2013.10.15 |
| 申请号 |
US201113252601 |
申请日期 |
2011.10.04 |
| 申请人 |
WANG SHAOPING;FAIRFIELD CRYSTAL TECHNOLOGY, LLC |
发明人 |
WANG SHAOPING |
| 分类号 |
H01L21/00;C30B28/12 |
主分类号 |
H01L21/00 |
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