发明名称 Semiconductor device and method of forming guard ring around conductive TSV through semiconductor wafer
摘要 A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. An insulating lining is formed around the conductive vias and a conductive layer is formed over the insulating lining. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and conductive vias. A first portion of the first insulating layer is removed and a second portion of the first insulating layer remains as guard rings around the conductive vias. A conductive layer is formed over the conductive vias. A second insulating layer is formed over the surface of the semiconductor wafer, guard rings, and conductive vias. A portion of the second insulating layer is removed to expose the conductive vias and a portion of the guard rings.
申请公布号 US8558389(B2) 申请公布日期 2013.10.15
申请号 US201113315033 申请日期 2011.12.08
申请人 NA DUK JU;CHIA LAI YEE;YONG CHANG BEOM;STATS CHIPPAC, LTD. 发明人 NA DUK JU;CHIA LAI YEE;YONG CHANG BEOM
分类号 H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/48
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