发明名称 |
Semiconductor device and method of forming guard ring around conductive TSV through semiconductor wafer |
摘要 |
A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. An insulating lining is formed around the conductive vias and a conductive layer is formed over the insulating lining. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and conductive vias. A first portion of the first insulating layer is removed and a second portion of the first insulating layer remains as guard rings around the conductive vias. A conductive layer is formed over the conductive vias. A second insulating layer is formed over the surface of the semiconductor wafer, guard rings, and conductive vias. A portion of the second insulating layer is removed to expose the conductive vias and a portion of the guard rings. |
申请公布号 |
US8558389(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US201113315033 |
申请日期 |
2011.12.08 |
申请人 |
NA DUK JU;CHIA LAI YEE;YONG CHANG BEOM;STATS CHIPPAC, LTD. |
发明人 |
NA DUK JU;CHIA LAI YEE;YONG CHANG BEOM |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|