| 摘要 |
PURPOSE: A stacked memory device improves the integration density of a memory device by stacking multiple unit memory cells. CONSTITUTION: Multiple memory cells (mc1-mc4) are stacked on a semiconductor substrate. The stacked memory cells are connected in series. Multiple word lines are connected to the corresponding memory cells and control the operation of each memory cell. The memory cells include a switching element (T1-T4) and a variable resistance layer (160). The variable resistance layer is connected to the switching element in parallel. |
