发明名称 |
NON-PLANAR TRANSISTORS AND METHODS OF FABRICATION THEREOF |
摘要 |
The present description relates to the formation source/drain structures within non-planar transistors, wherein fin spacers are removed from the non-planar transistors in order to form the source/drain structures from the non-planar transistor fins or to replace the non-planar transistor fins with appropriate materials to form the source/drain structures.
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申请公布号 |
US2013264617(A1) |
申请公布日期 |
2013.10.10 |
申请号 |
US201113993332 |
申请日期 |
2011.09.30 |
申请人 |
JOSHI SUBHASH M.;HATTENDORF MICHAEL |
发明人 |
JOSHI SUBHASH M.;HATTENDORF MICHAEL |
分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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