| 摘要 |
PROBLEM TO BE SOLVED: To provide a periodic table group 13 metal nitride semiconductor crystal in which dislocation that has an edge component that influences device property is decreased, and that can exert the excellent device property.SOLUTION: In a periodic table group 13 metal nitride semiconductor crystal having a region making a C-plane a main surface, as for absolute values of angular variation amounts of diffraction peaks obtained by an X-ray rocking curve measurement of a (006) surface and a (102) surface of the crystal, the absolute value of the angular variation amount of the diffraction peak obtained by an X-ray rocking curve measurement of the surface (102) is made small, and thereby the problem is solved. |
