发明名称 READ VOLTAGE GENERATION CIRCUIT, MEMORY AND MEMORY SYSTEM INCLUDING THE SAME
摘要 <p>PURPOSE: A read voltage generating circuit, a memory including the same, and a memory system control the levels of read voltages variously by increasing or decreasing a code value according to set counting steps. CONSTITUTION: A register (610) stores an initial read voltage code. A counter circuit increases or decreases a read voltage code at every read re-try operation by using the initial read voltage code as an initial value. A voltage generating circuit (630) generates a read voltage corresponding to the read voltage code generated at the counter circuit. [Reference numerals] (630) Voltage generating circuit; (AA) Register; (BB) Counter circuit</p>
申请公布号 KR20130110970(A) 申请公布日期 2013.10.10
申请号 KR20120033358 申请日期 2012.03.30
申请人 SK HYNIX INC. 发明人 OH, SEUNG MIN
分类号 G11C7/10;G11C16/26 主分类号 G11C7/10
代理机构 代理人
主权项
地址