发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, along with a substrate processing apparatus, capable of effectively excluding an element contained in cleaning gas.SOLUTION: A method of manufacturing a semiconductor device includes a pre-film-forming step in which a film is formed on the surface of an inner wall of a process chamber by supplying a plurality of process gases into the process chamber in such a manner as the plurality of process gases are mixed without being plasma-excited, and a practical film forming step for forming a film on the substrate by alternately supplying the process chamber with the plurality of process gases in which at least one process gas is plasma-excited not to mix them each other, under a state in which the substrate is stored in the process chamber. |
申请公布号 |
JP2013211576(A) |
申请公布日期 |
2013.10.10 |
申请号 |
JP20130106133 |
申请日期 |
2013.05.20 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
SAKAI MASANORI;SHIMA NOBUHITO;OKUDA KAZUYUKI |
分类号 |
H01L21/318;C23C16/44;C23C16/52;H01L21/31 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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