发明名称 |
SEMICONDUCTOR PACKAGE WITH THROUGH SILICON VIA INTERCONNECT AND METHOD FOR FABRICATING THE SAME |
摘要 |
The invention provides a semiconductor package with a through silicon via (TSV) interconnect and a method for fabricating the same. An exemplary embodiment of the semiconductor package with a TSV interconnect includes a semiconductor substrate. A through hole is formed through the semiconductor substrate. A TSV interconnect is disposed in a through hole. A conductive layer lines a sidewall of the through hole, surrounding the TSV interconnect.
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申请公布号 |
US2013264676(A1) |
申请公布日期 |
2013.10.10 |
申请号 |
US201313846138 |
申请日期 |
2013.03.18 |
申请人 |
MEDIA TEK INC.;MEDIATEK INC. |
发明人 |
YANG MING-TZONG;HUNG CHENG-CHOU;HUANG YU-HUA;HUANG WEI-CHE |
分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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