| 摘要 |
<p>This solid-state image pickup apparatus is provided with: a semiconductor layer (17); a photoelectric conversion section or a charge holding section, which is disposed on the light receiving surface side of the semiconductor layer (17); a connecting section (21), which is formed on the semiconductor layer (17), and reads out signal charges generated by means of the photoelectric conversion section or the charge holding section; a charge accumulating section (23) having the signal charges accumulated therein, said signal charges having been read out by means of the connecting section (21); a potential barrier section (22), which is provided between the connecting section (21) and the charge accumulating section (23); and an element isolating section (27), which is configured of a trench (54) surrounding the side surfaces of the connecting section (21), and an insulating layer (25) formed in the trench (54).</p> |
