Planar or tubular sputter target and method for producing the same

摘要

Planar sputtering target with an area of greater than 0.3 m 2> or tubular sputtering target with a length of at least 1 m, comprises a silver-based alloy with 0.01-5 wt.% at least one further alloy component comprising indium, tin, antimony or bismuth; and a crystal structure with an average grain size of less than 120 mu m, an oxygen content of less than 50 mg/kg, impurity elements of less than 0.5 mg/kg, which comprises aluminum, lithium, sodium, calcium, magnesium, barium and chromium of, and a metal purity of at least 99.99 wt.%. An independent claim is also included for producing a planar sputtering target with an area of greater than 0.3 m 2> or a tubular sputtering target with a length of at least 1 m, comprising melting an alloy that comprises silver and at least one further alloy component comprising indium, tin, antimony or bismuth; casting the melt into a mold to form a molded article of the silver-base alloy; and forming the molded body to the sputtering target. The melting takes place by induction melting under reducing conditions by adjusting an oxygen content of less than 50 mg/kg.