发明名称 Memory device and memory access method
摘要 Provided is a memory device in which the circuit structure is simplified while the functions of a memory including an OTP memory and a memory including a pseudo-MTP memory are maintained. A memory device includes a plurality of memory sets each including a mark bit storage area for storing a mark bit, which indicates that an object is deleted data, and a data bit storage area for storing data, the memory device being built from an OTP memory including an OTP memory block and a pseudo-MTP memory block, the OTP memory block containing a given number of memory sets to operate as an OTP memory, the pseudo-MTP memory block containing the rest of the memory sets operates as a pseudo-MTP memory. The mark bit is written in advance in the mark bit storage area of the OTP memory block.
申请公布号 US8553443(B2) 申请公布日期 2013.10.08
申请号 US201213357712 申请日期 2012.01.25
申请人 SHEN BIAO 发明人 SHEN BIAO
分类号 G11C17/00 主分类号 G11C17/00
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