发明名称 Flexible integrated circuit device layers and processes
摘要 This disclosure provides systems, processes, and apparatus implementing and using techniques for fabricating flexible integrated circuit (IC) device layers. In one implementation, a sacrificial layer is deposited on a substrate. The sacrificial layer can include amorphous silicon or molybdenum, by way of example. One or more electronic components are formed on the sacrificial layer. A polymer coating is provided on the one or more electronic components to define a coated device layer. The sacrificial layer is removed to release the coated device layer from the substrate. The sacrificial layer can be removed using a xenon difluoride gas or by etching, for example. Coated device layers made in accordance with this process can be stacked. The substrate can be formed of glass, silicon, a plastic, a ceramic, a compound semiconductor, and/or a metal, depending on the desired implementation. The electronic component(s) can include a passive component such as a resistor, an inductor, or a capacitor. The electronic component(s) can also or alternatively include an active component such as a transistor.
申请公布号 US8552536(B2) 申请公布日期 2013.10.08
申请号 US20100970140 申请日期 2010.12.16
申请人 SASAGAWA TERUO;ARBUCKLE BRIAN;QUALCOMM MEMS TECHNOLOGIES, INC. 发明人 SASAGAWA TERUO;ARBUCKLE BRIAN
分类号 H01L23/58 主分类号 H01L23/58
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