发明名称 |
Generating a pumping force in a silicon melt by applying a time-varying magnetic field |
摘要 |
Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (IUDC) and supplying a lower coil with a second direct current (ILDC). The method also includes supplying the upper coil with a first alternating current (IUAC) and supplying the lower coil with a second alternating current (ILAC) to generate a time-varying magnetic field, wherein the time-varying magnetic field generates a pumping force in the semiconductor melt.
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申请公布号 |
US8551247(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US20090537066 |
申请日期 |
2009.08.06 |
申请人 |
SREEDHARAMURTHY HARIPRASAD;KULKARNI MILIND;KORB HAROLD W.;MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
SREEDHARAMURTHY HARIPRASAD;KULKARNI MILIND;KORB HAROLD W. |
分类号 |
C30B30/04 |
主分类号 |
C30B30/04 |
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地址 |
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