| 摘要 |
<p>An amorphous layer (101) is formed in a region between the surface and the first depth (A) of a semiconductor substrate (100). At this time, a defect (103) occurs in the vicinity of an amorphous/crystal interface (102). Following that, the crystal structure of the amorphous layer (101) is restored by a heat treatment in a region from the first depth (A) to the second depth (B) which is shallower than the first depth (A). Consequently, the amorphous layer (101) ranges from the surface of the silicon substrate (100) to the second depth (B). In this connection, the defect (103) remains at the first depth (A). A pn junction (104) is then formed at the third depth (C), which is shallower than the second depth (B), through ion implantation.</p> |
