| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a semiconductor gas rate sensor which can maintain good airtightness, does not allow the protrusion of an adhesive, and is high in productivity and in which chips can be bonded accurately to each other. SOLUTION: This method of manufacturing the semiconductor gas rate sensor includes a transparent film fitting step (ST13) of fitting a transparent film provided with transmitting spheres which transmit the adhesive to the joint surfaces of Si wafers, a step (ST14) of applying the adhesive to the joint surfaces of the Si wafers in forms following the transmitting spheres by transmitting the adhesive from the upside of the transmitting film, and a step (ST15) of bonding the joint surfaces of first and second Si wafers 23 and 24 to each other by aligning the first alignment mark 28 of the first wafer 23 and the second alignment mark of the second wafer 24 with prescribed positions by reading the alignment marks 28 and 29 by transmitting infrared rays through the marks 28 and 29. COPYRIGHT: (C)2004,JPO
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