| 摘要 |
<p>PURPOSE: A variable resistance memory device is provided to easily form multilevel cells by storing data according to the combination of the resistance states of variable resistance material layers. CONSTITUTION: A second electrode (230A) is formed between a pair of first electrodes (210A,210B). A first variable resistance material layer (220A) is formed between one of the pair of the first electrodes and a second electrode. The first variable resistance material layer is switched between a high resistance state and a low resistance state. A second variable resistance material layer (220B) is formed between the other of the pair of the first electrodes and the second electrode. The second variable resistance material layer is switched between the high resistance state and the low resistance state. The first reset of the first variable resistance material layer and a first reset voltage are different from the second reset of the second variable resistance material layer and a second reset voltage.</p> |
