| 摘要 |
PROBLEM TO BE SOLVED: To provide a configuration memory which is nonvolatile, has a small area size, and can prevent a read-disturb error.SOLUTION: A configuration memory includes a first memory string MS1 including first and second nonvolatile memory transistors MC11, MC12 connected in series between a common node CN and a first data line BL1, a second memory string MS2 including third and fourth nonvolatile memory transistors MC21, MC22 connected in series between the common node CN and a second data line BL2, and a flip-flop circuit FF connected between the common node CN and an output node OUT. A first context is stored in the first and third nonvolatile memory transistors MC11, MC21, and a second context is stored in the second and fourth nonvolatile memory transistors MC12, MC22. |
