| 摘要 |
PROBLEM TO BE SOLVED: To provide an output circuit using a high side NMOS transistor which improves an electrostatic breakdown resistance by blocking leakage paths for a gage charge.SOLUTION: The output circuit using a high side NMOS transistor includes a leakage path blocking PMOS transistor M7 and a gate voltage control circuit 5. The gate voltage control circuit 5 raises a gate voltage of the leakage path blocking PMOS transistor M7 to set an off state when a positive surge voltage is applied to an input terminal IN relative to a bootstrap terminal BT, and lowers the gate voltage of the PMOS transistor M7 to set an on state during normal operation of the output circuit. |
