| 摘要 |
PROBLEM TO BE SOLVED: To limit impurities being incorporated into a film, when performing deposition by forming plasma by the ICP system.SOLUTION: The plasma formation method for forming plasma in a vacuum container by using an electrode plate having one end for receiving high frequency current supply and the other grounded end includes a step for reducing the pressure of the vacuum container, a step for supplying a material gas, along with neon gas, into the pressure-reduced space of the vacuum container, a step for generating plasma in the vacuum container by feeding a high frequency current to the electrode plate, and a step for exhausting the material gas and neon gas from the vacuum container. |
