发明名称 |
METHODS AND APPARATUSES TO FORM SELF-ALIGNED CAPS |
摘要 |
At least one conductive line in a dielectric layer over a substrate is recessed to form a channel. The channel is self-aligned to the conductive line. The channel can be formed by etching the conductive line to a predetermined depth using a chemistry comprising an inhibitor to provide uniformity of etching independent of a crystallographic orientation. A capping layer to prevent electromigration is deposited on the recessed conductive line in the channel. The channel is configured to contain the capping layer within the width of the conductive line.
|
申请公布号 |
US2013256899(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201113991899 |
申请日期 |
2011.11.04 |
申请人 |
BOYANOV BOYAN;SINGH KANWAL JIT |
发明人 |
BOYANOV BOYAN;SINGH KANWAL JIT |
分类号 |
H01L21/768;H01L23/485 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|