| 摘要 |
The invention relates to a diode thin film assembly (1) for detecting hydrogen, comprising a first conductive layer (2), a metal oxide layer (3) that is applied to the first conductive layer (2) or generated on the first conductive layer (2), and a metal layer (4) that is applied to the metal oxide layer (3), wherein the electron work function of the first conductive layer (2) is lower than the electron work function of the metal oxide layer (3), such that an ohmic contact is formed between the first conductive layer (2) and the metal oxide layer (3), and wherein a Schottky contact is formed between the metal oxide layer (3) and the metal layer (4). According to the invention, the metal oxide layer (3) has a sponge-like porous structure and the metal layer (4) applied to the metal oxide layer (3) has a corresponding porous structure. The invention further relates to a method for producing a diode thin film assembly (1), to the advantageous uses thereof and to a hydrogen sensor. |
