发明名称 |
Method for enhancing lithographic imaging of isolated and semi-isolated features |
摘要 |
The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention.
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申请公布号 |
US8546069(B2) |
申请公布日期 |
2013.10.01 |
申请号 |
US20090354247 |
申请日期 |
2009.01.15 |
申请人 |
HUANG WU-SONG;MCINTYRE GREGORY R.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HUANG WU-SONG;MCINTYRE GREGORY R. |
分类号 |
G03F7/40 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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