发明名称 |
Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element |
摘要 |
A method of programming a nonvolatile memory cell. The nonvolatile memory cell includes a diode steering element in series with a carbon storage element The method includes providing a first voltage to the nonvolatile memory cell. The first voltage reverse biases the diode steering element. The carbon storage element sets to a lower resistivity state.
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申请公布号 |
US8547725(B2) |
申请公布日期 |
2013.10.01 |
申请号 |
US20100703289 |
申请日期 |
2010.02.10 |
申请人 |
KUMAR TANMAY;SCHEUERLEIN ROY;KALRA PANKAJ;ZHANG JINGYAN;SANDISK 3D LLC |
发明人 |
KUMAR TANMAY;SCHEUERLEIN ROY;KALRA PANKAJ;ZHANG JINGYAN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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