发明名称 |
Integration of MOSFETs in a source-down configuration |
摘要 |
An output stage for a switched mode power supply has a high-side switch having a first power FET and a first speed-up FET monolithically integrated onto a first die. A low-side switch has a second power FET and a second speed-up FET monolithically integrated onto a second die. A semiconductor device has the power FET and the speed-up FET monolithically integrated in a "source-down" configuration. A method of operating an output stage of a switched mode power supply alternately turns on and off a high-side and a low-side switch and drives at least one of the switches with a speed-up FET monolithically integrated with the switch.
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申请公布号 |
US8547162(B2) |
申请公布日期 |
2013.10.01 |
申请号 |
US20100964527 |
申请日期 |
2010.12.09 |
申请人 |
KOREC JACEK;KOCON CHRISTOPHER B.;XU SHUMING;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KOREC JACEK;KOCON CHRISTOPHER B.;XU SHUMING |
分类号 |
H03K17/687 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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