发明名称 Integration of MOSFETs in a source-down configuration
摘要 An output stage for a switched mode power supply has a high-side switch having a first power FET and a first speed-up FET monolithically integrated onto a first die. A low-side switch has a second power FET and a second speed-up FET monolithically integrated onto a second die. A semiconductor device has the power FET and the speed-up FET monolithically integrated in a "source-down" configuration. A method of operating an output stage of a switched mode power supply alternately turns on and off a high-side and a low-side switch and drives at least one of the switches with a speed-up FET monolithically integrated with the switch.
申请公布号 US8547162(B2) 申请公布日期 2013.10.01
申请号 US20100964527 申请日期 2010.12.09
申请人 KOREC JACEK;KOCON CHRISTOPHER B.;XU SHUMING;TEXAS INSTRUMENTS INCORPORATED 发明人 KOREC JACEK;KOCON CHRISTOPHER B.;XU SHUMING
分类号 H03K17/687 主分类号 H03K17/687
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