发明名称 Semiconductor integrated circuit device
摘要 A capacitance cell includes a substrate structure layer having pair diffusion regions, and an interconnect layer having pair of power supply lines. The capacitance cell also includes a capacitance composed of a first electrode, a dielectric member and a second electrode stacked together, and is formed in a frame shape and disposed in a space between the substrate structure layer and the interconnect layer so as to extend along an outer rim of the frame shape of a standard cell region in which a standard cell is arranged. The capacitance cell also includes a first substrate contact that electrically connects one of the pair of power supply lines to one of the diffusion regions externally of the standard cell region. The capacitance cell also includes a second substrate contact that electrically connects the other power supply line to the other diffusion region, externally of the standard cell region. The capacitance cell further includes a first capacitance contact electrically connecting the first electrode to the other diffusion region internally of the standard cell region, and a second capacitance contact electrically connecting the second electrode to the one power supply line internally of the standard cell region.
申请公布号 US8546913(B2) 申请公布日期 2013.10.01
申请号 US201113064599 申请日期 2011.04.01
申请人 WADA MASATAKE;IMAKITA NAOKI;RENESAS ELECTRONICS CORPORATION 发明人 WADA MASATAKE;IMAKITA NAOKI
分类号 H01L27/118;H01L23/52 主分类号 H01L27/118
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