FIELD-EFFECT TRANSISTOR STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a field-effect transistor structure which can improve mobility properties and threshold voltage distribution, and a semiconductor device and an integrated circuit device that include the same.SOLUTION: The field-effect transistor structure has an element isolation film on a substrate, and a fin extending from the substrate and protruding through the element isolation film. The fin comprises a threshold voltage adjustment region doped with impurities of a first concentration, and a carrier region doped with impurities of a second concentration lower than the first concentration.