| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a two-layer SOI structure.SOLUTION: In a semiconductor device, 1st semiconductor layers (5 and 6) a part of which is regulated by a first embedded insulating film 7 are provided on a semiconductor substrate 1 through 1st interlayer insulating films (2-4). A gate electrode 13 is provided which encloses a periphery of a part 6 of the semiconductor layer through a gate insulating film 12. A MISFET which has a structure in which source drain regions (8-11) are provided by self-matching with a gate electrode 13 is formed on the 1st semiconductor layer. Further, 2nd semiconductor layers (19 and 20) a part of which is regulated by a second embedded insulating film 21 are provided through second interlayer insulating films (15-18) that are stacked. A gate electrode 27 is provided which encloses a periphery of a part 20 of the semiconductor layer through a gate insulating film 26. The MISFET having a structure in which source drain regions (22-25) are provided by self-matching with the gate electrode 27 is formed on a second semiconductor layer. |
