METHOD FOR FABRICATING FIELD EFFECT TRANSISTOR

摘要

PURPOSE: A method for forming a field effect transistor is provided to improve the efficiency of a process by easily forming fin parts with different widths. CONSTITUTION: A substrate (100) is prepared. The substrate includes a first region and a second region. Fin parts are formed on the first region and the second region. A first mask pattern (201) is formed on the substrate. The widths of the fin parts are increased or decreased on the first region.