INTEGRATED CIRCUIT (IC) HAVING TSVS AND STRESS COMPENSATING LAYER

摘要

A through-substrate via (TSV) unit cell includes a substrate having a topside semiconductor surface and a bottomside surface, and a TSV which extends the full thickness of the substrate including an electrically conductive filler material surrounded by a dielectric liner that forms an outer edge for the TSV. A circumscribing region of topside semiconductor surface surrounds the outer edge of the TSV. Dielectric isolation is outside the circumscribing region. A tensile contact etch stop layer (t-CESL) is on the dielectric isolation, and on the circumscribing region.