发明名称 INTEGRATED CAPACITORS IN PACKAGE-LEVEL STRUCTURES, PROCESSES OF MAKING SAME, AND SYSTEMS CONTAINING SAME
摘要 An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-thickness solder mask. A process of forming the top electrode includes forming the top electrode over a high-K dielectric that is in a patterned portion of the core structure.
申请公布号 KR101312135(B1) 申请公布日期 2013.09.26
申请号 KR20117021787 申请日期 2006.12.11
申请人 发明人
分类号 H01L23/498;H01L23/52;H01L23/64 主分类号 H01L23/498
代理机构 代理人
主权项
地址