| 摘要 |
Provided is a gas barrier film including a base, a first barrier layer containing silicon which is formed on at least one surface of the base, and a second barrier layer containing silicon ox nitride which is formed on the first barrier layer. The ater vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer is formed on the base is R1 and the water vapor transmission rate (g/m2/day) at 40° C. and 90% RH in a structure in which the first barrier layer and the second barrier layer are laminated on the base is R2, and the ratio of the water vapor transmission rate R1 to the water vapor transmission rate R2 (R1/R2) is 80 or more and 5000 or less. Hereby, excellent, barrier performance can be exhibited under a high-temperature and high-humidity environment.
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