| 摘要 |
A semiconductor device (1000D) comprises a substrate (1), a TFT (100A) supported by the substrate (1), an auxiliary capacitor (300A), a source wire (8), and a gate wire (6). The auxiliary capacitor (300A) has a first auxiliary capacitor electrode (12), a second auxiliary capacitor electrode (8x), and a first insulating layer (7). When viewed from the normal direction of the substrate (1), the gate wire (6) and the source wire (8) are overlapped to form a gate-source intersection region (200A) in which the first insulating layer (7) and a second insulating layer (11) are formed. The distance (L2) between the first auxiliary capacitor electrode (12) and the second auxiliary capacitor electrode (8x) is smaller than the distance (L1) between the gate wire (6) and the source wire (8) in the gate-source intersection region (200A). |
