| 摘要 |
PURPOSE: A plasma processing apparatus is provided to improve uniformity of plasma generated in a plasma generation electrode. CONSTITUTION: A plasma processing apparatus(2000) includes a substrate support part(1100), a plasma generation electrode including a number of linear members(111), a chamber(1300) and a baffle(400). The substrate support part is arranged on the bottom of the chamber to support a substrate. The plasma generation electrode injects a gas toward the bottom as facing with the top of the substrate support part, and generates plasma with the gas using electrical power applied from the outside. The chamber accommodates the substrate support part or the plasma generation electrode, and forms an exhaust pipe exhausting a remaining gas toward the top. The baffle is arranged on the top of the plasma generation electrode. |
