发明名称 Method for compensation of manufacturing tolerances of at least one electric parameter of a power transistor and associated system
摘要 The system (21) includes: a power transistor (22), a data medium (60) including data relating to the manufacturing tolerance (Tol) of at least one electric parameter of the transistor (22), an electric circuit (26) for controlling the transistor adapted so as to operate for a reference value of the parameter (VREF), an electric circuit (64) having an inductance of less than 100 nH and such that the assembly (70) formed with the circuit (64) and the transistor (22) has a value for the parameter, for which the deviation in absolute with the reference value is strictly less than the manufacturing tolerance (Tol).
申请公布号 US2013241605(A1) 申请公布日期 2013.09.19
申请号 US201313834301 申请日期 2013.03.15
申请人 GE ENERGY POWER CONVERSION TECHNOLOGY LTD. 发明人 RICHARD STEPHANE;CARA HERVE;NICOLAI JEAN-MARC
分类号 H03K17/14 主分类号 H03K17/14
代理机构 代理人
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