| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize a memory cell while suppressing degradation of the characteristics of a selection transistor.SOLUTION: A semiconductor memory device includes: a memory cell transistor having a first insulating film, a first floating gate, a second insulating film, a second floating gate, a third insulating film, and a control gate that are sequentially formed on a substrate; and a selection transistor having a fourth insulating film, a first electrode layer, a fifth insulating film, a second electrode layer, a sixth insulating film, and a third electrode layer that are sequentially formed on the substrate. An opening is provided in at least a part of the fifth insulating film and the sixth insulating film, and the first electrode layer, the second electrode layer, and the third electrode layer are electrically connected though the opening. |
