发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of efficiently forming a pattern.SOLUTION: A method of manufacturing a semiconductor device includes the steps of: forming a sacrifice portion on a substrate on which a semiconductor element is formed; shortening the width dimension of the sacrifice portion; forming a film that covers the sacrifice portion; exposing a top surface of the sacrifice portion by removing the formed film and forming a frame body that surrounds the sacrifice portion; removing the sacrifice portion; and forming a first element and a second element by removing a part of the frame body. In the step of forming the film that covers the sacrifice portion, the film is formed using a material with conductivity. In the step of forming the first element and the second element, the first element is formed in a first direction when viewed from the center of the frame body, and the second element is formed in a second direction crossing the first direction when viewed from the center of the frame body. The first element functions as an electrode of the semiconductor element.
申请公布号 JP2013187422(A) 申请公布日期 2013.09.19
申请号 JP20120052274 申请日期 2012.03.08
申请人 TOSHIBA CORP 发明人 AOI TAKAYUKI
分类号 H01L21/768;H01L21/3205;H01L21/3213;H01L21/336;H01L21/76;H01L21/8234;H01L21/8238;H01L21/8244;H01L23/522;H01L23/532;H01L27/088;H01L27/092;H01L27/11;H01L29/78 主分类号 H01L21/768
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