| 摘要 |
In the transistor including a gate electrode and an oxide semiconductor film which are provided to overlap with each other with a gate insulating film provided therebetween and a first electrode and a second electrode which are in contact with the oxide semiconductor film, the second electrode partly surrounds an end portion and side surface portions of the first electrode. In the oxide semiconductor film, a channel region is formed in a region which overlaps with the gate electrode and which is between the first electrode and the second electrode. An end portion of the oxide semiconductor film which continuously extends from end portions of the channel region does not overlap with the gate electrode.
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