Nonvolatile memory device and method for manufacturing nonvolatile memory device

摘要

A nonvolatile memory device includes: a first interconnection extending in a first direction; a second interconnection extending in a second direction nonparallel to the first direction; and a memory layer placed between the first interconnection and the second interconnection and reversibly transitioning between a first state and a second state by a current supplied via the first interconnection and the second interconnection. A cross section parallel to the first and the second direction of the memory layer decreases toward the second interconnection.