COMPOSITION FOR FORMING RESIST LOWER LAYER FILM AND METHOD FOR FORMING PATTERN

摘要

PURPOSE: A resist underlayer formation composition and a pattern formation method are provided to use the composition and the method for producing a semiconductor device. CONSTITUTION: A resist underlayer formation composition contains polysiloxane and an organic solvent. The organic solvent contains an alkylene glycol monoalkyl ether acetate group having the standard boiling point lower than 150.0°C, and an organic solvent having the standard boiling point greater than 150.0°C. The content of the alkylene glycol monoalkyl ether acetate group is 50-99 mass%, and the content of the organic solvent is 1-50 mass%. A pattern formation method comprises the following steps: forming a resist underlayer on a non-processed substrate using the resist underlayer formation composition; forming a resist film on the resist underlayer using a resist composition; exposing the resist film by emitting exposure light using a photomask; forming a resist pattern by developing the exposed resist film; and dry-etching the resist underlayer and the non-processed substrate using the resist pattern as a mask.