发明名称 Sulfonium salt, resist composition, and patterning process
摘要 A sulfonium salt of a naphthylsulfonium cation having a hydrophilic phenolic hydroxyl group or ethylene glycol chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark-bright difference.
申请公布号 US8535869(B2) 申请公布日期 2013.09.17
申请号 US201113214295 申请日期 2011.08.22
申请人 OHSAWA YOUICHI;SAGEHASHI MASAYOSHI;KOBAYASHI TOMOHIRO;SHIN-ETSU CHEMICAL CO., LTD. 发明人 OHSAWA YOUICHI;SAGEHASHI MASAYOSHI;KOBAYASHI TOMOHIRO
分类号 G03F7/004;G03F7/039;G03F7/11;G03F7/20;G03F7/30 主分类号 G03F7/004
代理机构 代理人
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