发明名称 |
Sulfonium salt, resist composition, and patterning process |
摘要 |
A sulfonium salt of a naphthylsulfonium cation having a hydrophilic phenolic hydroxyl group or ethylene glycol chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark-bright difference.
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申请公布号 |
US8535869(B2) |
申请公布日期 |
2013.09.17 |
申请号 |
US201113214295 |
申请日期 |
2011.08.22 |
申请人 |
OHSAWA YOUICHI;SAGEHASHI MASAYOSHI;KOBAYASHI TOMOHIRO;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OHSAWA YOUICHI;SAGEHASHI MASAYOSHI;KOBAYASHI TOMOHIRO |
分类号 |
G03F7/004;G03F7/039;G03F7/11;G03F7/20;G03F7/30 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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