| 摘要 |
<p>PURPOSE: A semiconductor memory device and an operating method thereof improve the reliability of a program operation by forming similar channel potential regardless of a program order. CONSTITUTION: Selected even cell strings and selected even bit lines, to which a second program allowable voltage (2VBLS) higher than a first program allowable voltage (1VBLS) is applied, are connected to each other. Memory cells of the selected even cell strings are programmed. Odd cell strings and selected odd bit lines, to which the first program allowable voltage is applied, are connected to each other, and memory cells of the selected odd cell strings are programmed when the programming of the memory cells is completed. [Reference numerals] (AA) BLe selection</p> |
