| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin film pattern with high accuracy and good reproducibility in a method for forming a thin film pattern by a photolithographic process and a wet etching process after a thin film is formed on a base, by controlling an amount of side etching that corrodes two-dimensionally an underlay thin film amount from a photoresist open end to a residual photoresist region.SOLUTION: An amount of side etching is controlled by roughness of a base surface, and in particular, the amount of side etching is suppressed by decreasing the base surface roughness represented by a center line average roughness Ra and smoothening the base surface. |
