SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve performance of a semiconductor device manufactured using an epitaxial wafer.SOLUTION: By ion-implanting of nitrogen or argon into the outer peripheral part of a semiconductor substrate SUB, a region is formed into which nitrogen or argon is ion-implanted and made to be amorphous, and then, thermal treatment is performed to crystallize the region while forming twin fault in the region. After that, an epitaxial layer EP is formed on the semiconductor substrate SUB. At that time, the epitaxial layer EP is grown in such a manner as the twin fault extends as far as the epitaxial layer EP by exceeding an interface between the semiconductor substrate SUB and the epitaxial layer EP. Thus, a twin fault region TRG in which twin fault occurs is formed at the outer peripheral part of a semiconductor wafer SW.