摘要 |
In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer. |
申请人 |
ROBERT BOSCH GMBH;YAMA, GARY;PURKL, FABIAN;LIGER, MATTHIEU;ILLING, MATTHIAS |
发明人 |
YAMA, GARY;PURKL, FABIAN;LIGER, MATTHIEU;ILLING, MATTHIAS |