发明名称 SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing method which cleanly removes a resist from a main surface of a substrate while reducing the consumption of a resist peeling liquid.SOLUTION: An SPM liquid is supplied onto a surface of a wafer held by a wafer rotation mechanism at a predetermined flow rate and the wafer is rotated at a first rotation speed to form a liquid film of the SPM liquid that covers the surface of the wafer W (S3: SPM liquid film formation process). Next, the wafer W is rotated at a second rotation speed slower than the first rotation speed thereby holding the formed liquid film of the SPM liquid on the surface of the wafer (S4: SPM liquid film heating process). In the SPM liquid film heating process, a heater is disposed close to and facing the surface of the wafer and heats the liquid film of the SPM liquid. Further, the heater is moved along the surface of the wafer.
申请公布号 JP2013182958(A) 申请公布日期 2013.09.12
申请号 JP20120044651 申请日期 2012.02.29
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 NEGORO SEI
分类号 H01L21/027;H01L21/304 主分类号 H01L21/027
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