| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, capable of improving driving ability of a transistor by suppressing a short channel effect to reduce S factor, while suppressing characteristic fluctuations of other elements.SOLUTION: A semiconductor device includes a field effect transistor which contains an active region 16 being divided by an element separation region 14 so as to extend in a first direction, on a main surface of a semiconductor substrate 12, a gate groove 18 which is a groove that traverses the active region 16 so as to divide an upper surface of the active region 16 into two source/drain regions along the first direction, with a cross section of its bottom part, when viewed along the first direction, having a shape containing a portion protruding downward and a portion protruding upward, being continued each other, and a gate electrode 22 which is embedded in the gate groove 18 that is contained in the active region 16 with a gate insulating film 21 in between. |
