发明名称 Microwave semiconductor amplifier
摘要 <p>A microwave semiconductor amplifier includes a semiconductor amplifier element (14), an input matching circuit (12) and an output matching circuit (20). The semiconductor amplifying element (14) includes an input electrode and an output electrode and has a capacitive output impedance. The input matching circuit (12) is connected to the input electrode. The output matching circuit (20) includes a bonding wire (15) and a first transmission line (16). The bonding wire (15) includes first and second end portions. The first end portion is connected to the output electrode. The second end portion is connected to one end portion of the first transmission line (16). A fundamental impedance and a second harmonic impedance seen toward the external load change toward the one end portion. The second harmonic impedance at the one end portion has an inductive reactance. The output matching circuit (20) matches the capacitive output impedance of the semiconductor amplifying element (14) to the fundamental impedance of the external load.</p>
申请公布号 EP2637302(A1) 申请公布日期 2013.09.11
申请号 EP20120199817 申请日期 2012.12.31
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKAGI, KAZUTAKA
分类号 H03F1/56;H01L23/64;H03F3/60 主分类号 H03F1/56
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